15-08

A.E.F. de Jong, V. Vonk, V. Honkimäki, B. Gorges, H. Vitoux, E. Vlieg,

A sample chamber for in situ high-energy X-ray studies of crystal growth at deeply buried interfaces in harsh environments,

J. of Cryst. Growth 420 (2015) 84-89

Abstract:

We introduce a high pressure high temperature chamber for in situ synchrotron X-ray studies. The chamber design allows for in situ studies of thin film growth from solution at deeply buried interfaces in harsh environments. The temperature can be controlled between room temperature and 1073 K while the pressure can be set as high as 50 bar using a variety of gases including N₂ and NH₃. The formation of GaN on the surface of a Ga₁₃Na₇ melt at 1073 K and 50 bar of N₂ is presented as a performance test.

Keywords

• A1. Interfaces;
• A1. X-ray diffraction;
• A3. Liquid phase epitaxy;
• B1. Gallium compounds;
• B1. Nitrides;
• B2. Semiconducting III–V materials